feb. 2009 rtc rtc circuit diagram c2e1 e2 c1 g2e2 e1 g1 cm g1e1 e2 g2 c2e1 c1 e2 27 24 24 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 114 418 13 48 23 4 12 13.5 80 0.25 2 6.5 mounting holes 3?5nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label tc measured point CM50DU-24F application general purpose inverters & servo controls, etc mitsubishi igbt modules CM50DU-24F high power switching use ? i c ..................................................................... 50a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm
feb. 2009 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v v cc = 600v, i c = 50a, v ge = 15v v cc = 600v, i c = 50a v ge = 15v r g = 6.3 ? , inductive load i e = 50a i e = 50a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to heat sink, thermal compound applied *2 (1/2 module) case temperature measured point is just under the chips i c = 5.0ma, v ce = 10v i c = 50a, v ge = 15v v ce = 10v v ge = 0v 1200 20 50 100 50 100 320 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM50DU-24F high power switching use v v a a a a w c c v rms n ?m n ?m g ma a nf nf nf nc ns ns ns ns c v k/w k/w k/w k/w ? 1.8 1.9 550 2.1 0.07 6.3 6v v 5 ns 1 20 2.4 20 0.85 0.5 100 50 300 300 150 3.2 0.39 0.70 0.31 *3 63 collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. * 1 : case temperature (tc) measured point is indicated in outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage w eight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c charged part to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m6 screw t ypical value symbol parameter collector current emitter current t orque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. t est conditions 7 maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) t j = 25 c t j = 125 c
feb. 2009 3 mitsubishi igbt modules CM50DU-24F high power switching use performance curves 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 10 0 10 1 2 3 5 7 10 2 2 3 5 7 0.5 1 1.5 2 2.5 3 3.5 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 0.5 1 1.5 2 2.5 3 0 020406 080 100 5 4 3 2 1 0 6810 12 14 16 18 20 10 0 10 1 23 57 10 2 23 57 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 0 10 8.5 9.5 v ge =20v t j =25c 9 8 t j = 25c t j = 125c v ge = 15v i c = 100a i c = 50a i c = 20a t j = 25c t j = 25c v ge = 0v c ies c oes c res t d(off) t d(on) t f t r conditions: v cc = 600v v ge = 15v r g = 6.3? t j = 125c inductive load 11 15 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
feb. 2009 4 mitsubishi igbt modules CM50DU-24F high power switching use 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 1 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 0 2 4 6 8 10 12 14 16 18 20 0 200 400 600 800 1 10 ? 10 ? 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25c i rr t rr v cc = 400v v cc = 600v i c = 50a conditions: v cc = 600v v ge = 15v r g = 6.3? t j = 25c inductive load reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) time (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j c) = 0.39k / w fwdi part: per unit base = r th(j c) = 0.70k / w reverse recovery time t rr (ns) reverse recovery current l rr (a)
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